jump to navigation

Hafnium -The Future For Computer Chips 2007-01-28

Posted by clype in Discovery, Gizmo.
trackback

‘Intel’ and ‘International Business Machines’ (‘IBM’) have announced one of the biggest advances in transistors in four decades, overcoming a frustrating obstacle by ensuring microchips can get even smaller and more powerful.

The breakthrough, achieved via separate research efforts and announced on 2007-01-26, involves using an exotic new material to make transistors — the tiny switches that are the building blocks of microchips.

The technology involves a layer of material that regulates the flow of electricity through transistors.

‘At the transistor level, we haven’t changed the basic materials since the 1960s. So it’s a real big breakthrough,’ said The Head of ‘VLSI Research’ Mr.Dan Hutcheson.

‘”Moore’s Law” was coming to a grinding halt,’ he added.

This refers to the industry maxim laid down by ‘Intel’ co-founder Mr.Gordon Moore that the number of transistors on a chip doubles roughly every two years. The result of ‘Moore’s Law’ has been smaller and faster chips and their spread into a wide array of consumer products that now account for the bulk of the industry’s 128 ooo million GBP/year in sales.

  • The latest breakthrough means ‘Intel’, ‘IBM’ and others can proceed with technology roadmaps that call for the next generation of chips to be made with circuitry as small as 45 nanometres — about 1/2000th the width of a human hair.

‘Intel’ said it will use the technology, based on a silvery metal called ‘hafnium’, in new processors coming out later this year that the company hopes will give it a leg up on chips from rival ‘Advanced Micro Devices’ (AMD).

‘We do expect that those products will deliver higher performance levels than existing products,’ said Vice President of ‘Intel’s’ digital enterprise group operations Mr.Steve Smith.

‘What we’re seeing is excellent double-digit performance gains on media applications.’

‘IBM’ expects its technique to debut next year in chips made by its partners, which include ‘AMD’ and Japan’s ‘Toshiba’. Researchers are optimistic the new technology can be used at least through two more technology generations out, when circuitry will be just 22 nm.

‘We’ve been doing this for 40 years and we’ve got to the point where some of these layers you have to make smaller wouldn’t scale anymore,’ said ‘IBM’ Chief Technologist Mr.Bernie Meyerson.

‘We are getting down to a stage of technology where people have wondered if you could really ever go there, and we have definitely shown a roadmap down to these unbelievably tiny dimensions.’

The problem with the previous technology is that the layer of silicon-based material is now just 5 atoms thick, meaning lots of electricity leaks out, resulting in wasted power and shorter battery life.

‘It’s like running two faucets when you only need one. You’re actually wasting more water than you’re actually using,’ said Mr.Jim Mcgregor, an analyst with technology market research firm In-Stat.

The benefits of the new technique can be tapped in a number of ways. Transistors can be made smaller — potentially doubling the total number in a given area — their speed can be increased by more than 20 percent, or power leakage can be cut by 80 percent or more.

‘Consumers are going towards mobility and power-sensitive solutions. We need to not only make things smaller and more efficient but also use less power,’ Mr.Mcgregor said.

There are plenty of challenges in keeping ‘Moore’s Law’ on track. For instance, it is becoming harder to make beams of light narrow enough to etch circuitry on chips.

‘But this takes out what has been considered the biggest number one roadblock,’ said The Head of ‘VLSI Research’.

Advertisements

Comments»

No comments yet — be the first.

Leave a Reply

Fill in your details below or click an icon to log in:

WordPress.com Logo

You are commenting using your WordPress.com account. Log Out / Change )

Twitter picture

You are commenting using your Twitter account. Log Out / Change )

Facebook photo

You are commenting using your Facebook account. Log Out / Change )

Google+ photo

You are commenting using your Google+ account. Log Out / Change )

Connecting to %s

%d bloggers like this: